Broadband high-extinction-ratio nonvolatile optical switch based on phase change material
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1.State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2.University of the Chinese Academy of Sciences, Beijing 100049, China;3.School of Microelectronics, Shanghai University, Shanghai 201800, China

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Supported by the National Natural Science Foundation of China (62204250) and the Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits (SKLJC-Z2024-A05).

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    Abstract:

    In this paper, we present a broadband, high-extinction-ratio, nonvolatile 2×2 Mach-Zehnder interferometer (MZI) optical switch based on the phase change material Sb2Se3. The insertion loss (IL) is 0.84 dB and the extinction ratio (ER) reaches 28.8 dB at the wavelength of 1550 nm. The 3 dB bandwidth is greater than 150 nm. Within the 3 dB bandwidth, the ER is greater than 20.3 dB and 16.3 dB at bar and cross states, respectively. The power consumption for crystallization and amorphization of Sb2Se3 is 105.86 nJ and 49 nJ, respectively. The switch holds significant promise for optical interconnects and optical computing applications.

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History
  • Received:January 02,2025
  • Revised:February 12,2025
  • Adopted:February 18,2025
  • Online: November 28,2025
  • Published:
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